BUL3N7 datasheet, transistor equivalent, ST Microelectronics

BUL3N7 transistor equivalent, medium voltage fast-switching npn power transistor.

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Features and benefits

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* MEDIUM VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED 2 3 Applic.

Application

* 1 ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING TO-220 Description The BUL3N7 is manufactured using high voltag.

Description

The BUL3N7 is manufactured using high voltage Multi-Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining t.

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